We present a systematic study of the magnetic field induced metal-insulator transition in quasi-three-dimensional wide quantum wells by numerical calculations. Depending on carrier density and carrier mobility we observe both a change from metal to insulator-like temperature dependence as well as a
โฆ LIBER โฆ
A novel valence-transition model for the pressure-induced metal-to-insulator transition in the organic conductor (2,5DM - DCNQI)2Cu
โ Scribed by Mazumdar, S.; Campbell, D.K.; Lin, H.-Q.
- Book ID
- 122018501
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 57 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0379-6779
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