## Abstract In this article, we describe a method of design of very low phase noise dielectric resonators oscillators at 13 GHz. By using two Silicon Germanium transistors with total gains 8 dB and lower flicker noise corner between 10 kHz and 40 kHz, the phase noise of the oscillators can be achie
β¦ LIBER β¦
A novel technique for tuning dielectric resonators
β Scribed by Buer, K.V.; El-Sharawy, E.
- Book ID
- 114552207
- Publisher
- IEEE
- Year
- 1995
- Tongue
- English
- Weight
- 554 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0018-9480
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Figure 6 Maximum number of switches that can be cascaded as a function of the saturation power. Characteristics: The number of Ε½ 12 . Ε½ 14 . inputroutput ports is 16. L s L s 0.25, β¬ s 20 nm 3.