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A novel technique for profiling the lateral n- doping concentrations of submicron LDD MOS devices

✍ Scribed by Chung, S.S.; Shui-Ming Cheng; Lee, R.G.-H.; Song-Nian Kuo; Mong-Song Liang


Book ID
114537081
Publisher
IEEE
Year
1997
Tongue
English
Weight
216 KB
Volume
44
Category
Article
ISSN
0018-9383

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