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A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's

✍ Scribed by Choon-Leong Lou; Wai-Kin Chim; Chan, D.S.-H.; Tang Pan


Book ID
114537300
Publisher
IEEE
Year
1998
Tongue
English
Weight
250 KB
Volume
45
Category
Article
ISSN
0018-9383

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