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A novel scaling-parameter-dependent subthreshold swing model for double-gate (DG) SOI MOSFETs: including effective conducting path effect (ECPE)

✍ Scribed by Chiang, T K


Book ID
120806542
Publisher
Institute of Physics
Year
2004
Tongue
English
Weight
193 KB
Volume
19
Category
Article
ISSN
0268-1242

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