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A novel operation method to avoid over-erasure in a scaled trapping-nitride localized charge storage flash memory cell and its application for multilevel programming

✍ Scribed by Wen-Jer Tsai; Nian-Kai Zous; Tahui Wang; Ku, Y.-H.J.; Chih-Yuan Lu


Book ID
114618202
Publisher
IEEE
Year
2006
Tongue
English
Weight
292 KB
Volume
53
Category
Article
ISSN
0018-9383

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