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A novel methodology for sensing the breakdown location and its application to the reliability study of ultrathin Hf-silicate gate dielectrics

✍ Scribed by Crupi, F.; Kauerauf, T.; Degraeve, R.; Pantisano, L.; Groeseneken, G.


Book ID
114617907
Publisher
IEEE
Year
2005
Tongue
English
Weight
526 KB
Volume
52
Category
Article
ISSN
0018-9383

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