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A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si

✍ Scribed by A. Armstrong; A. Arehart; D. Green; J. S. Speck; U. K. Mishra; S. A. Ringel


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
68 KB
Volume
2
Category
Article
ISSN
1862-6351

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