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A novel low-voltage content-addressable-memory (CAM) cell with a fast tag-compare capability using partially depleted (PD) SOI CMOS dynamic-threshold (DTMOS) techniques

✍ Scribed by Liu, S.C.; Wu, F.A.; Kuo, J.B.


Book ID
119775848
Publisher
IEEE
Year
2001
Tongue
English
Weight
163 KB
Volume
36
Category
Article
ISSN
0018-9200

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