A novel integrated 3-D DMOS magnetic vector sensor based on BCD technology

✍ Scribed by Zongsheng Lai; Yi Liu; Guangli Wu; Hao Jiang

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 483 KB
• Volume: 22
• Category: Article
• ISSN: 0924-4247
• DOI: 10.1016/0924-4247(89)80078-0

✦ Synopsis

The noise properties of different s&con mtegrated magnetic-field sensors are presented, namely for the new gated s&con-on-sapphire rmcromagnetodlode, the lateral bipolar magnetotranslstor, the MOS-Hall sensor and the MOS magnetotranslstor (MAGFET) The nolse sources are Identified for each device and the relevant parameters are discussed The correspondmg hnuts m the detectlon of a magnetic field are also calculated From the fact that they are all mthm flthe 0 1 to 10 PT range for sensors based on Werent prmclples, and gwe very different senntlvlties, we suggest that this hrmt 1s more or less a charactenstic of the semiconductor matenal (related to Its physical parameters)