✦ LIBER ✦
A Novel High-Voltage ( 600 V) LDMOSFET With Buried N-Layer in Partial SOI Technology
✍ Scribed by Yue Hu; Qijun Huang; Gaofeng Wang; Sheng Chang; Hao Wang
- Book ID
- 114620900
- Publisher
- IEEE
- Year
- 2012
- Tongue
- English
- Weight
- 384 KB
- Volume
- 59
- Category
- Article
- ISSN
- 0018-9383
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