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A novel fabrication technique of T-shaped gates using an EGMEA and PMIPK multi-layer resist system and a single-step electron-beam exposure

✍ Scribed by Yeong-Lin Lai; Yeong-Kang Lai; Chun-Yen Chang; Edward Y. Chang


Book ID
114155855
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
315 KB
Volume
41-42
Category
Article
ISSN
0167-9317

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