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A novel diode linearizer for SiGe HBT power amplifier

✍ Scribed by Haiwen Liu; Toshihiko Yoshimasu; Satoshi Kurachi; Nobuyuki Ito; Koji Yonemura

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
266 KB
Volume
48
Category
Article
ISSN
0895-2477

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✦ Synopsis

In this paper, a novel diode linearizer to keep the base voltage of SiGe HBT power amplifier (PA) constant in the large-signal region is introduced. The results show that the output P 1dB , and poweradded efficiency (PAE) are improved by 4.9 dBm and 22.8%, respectively. At an input power of 20 dBm, the gain compression and phase distortion of the linearized PA is 2.1 dB and 1.1Β°, respectively, compared with 5.0 dB and 20.4Β°for the conventional PA. Also, the improved ACPR is given.

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