✍ Scribed by Dimitri Hariskos; Martin Ruckh; Ulfert Rühle; Thomas Walter; Hans Werner Schock; Jonas Hedström; Lars Stolt
No coin nor oath required. For personal study only.
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We investigate Cu(In,Ga)Se 2 -based solar cells with a new ZnSe buer layer deposited by metal-organic vapour deposition and compare their electronic properties to reference cells using a standard CdS buer layer. The best solar cell with a ZnSe buer layer achieves an eciency of 11 . 6%. We further in
Temperature-dependent measurements of the current±voltage characteristics and of the junction admittance of ZnO/CdS/Cu(In,Ga)Se 2 heterojunction solar cells are presented, together with numerical modelling of these experimental results. We explain the cross-over between dark and illuminated current±
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