A nonvolatile memory device made of a graphene nanoribbon and a multiferroic BiFeO3 gate dielectric layer

✍ Scribed by I. Jung; J.Y. Son

• Book ID: 113514636
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 561 KB
• Volume: 50
• Category: Article
• ISSN: 0008-6223
• DOI: 10.1016/j.carbon.2012.04.027