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A new two-dimensional model for the potential distribution of short gate-length MESFET's and its applications

โœ Scribed by Shan-Ping Chin; Ching-Yuan Wu


Book ID
114534697
Publisher
IEEE
Year
1992
Tongue
English
Weight
871 KB
Volume
39
Category
Article
ISSN
0018-9383

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โœ Samir El-Ghazaly; Tatsuo Itoh ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 768 KB

The Boltzmann transport equation is used to derive a set of conservation equations which is capable of describing the electron transport phenomena in a single-valley semiconductor. These conservation equations are averaged over the different valleys of the conduction band to develop another set of e