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A new treatment of Schottky barrier capacitance-voltage characteristics: Discussion of usual assumptions and determination of the deep gap states density in a-Si1−xGex:H alloys

✍ Scribed by J.P. Kleider; D. Mencaraglia; Z. Djebbour


Book ID
115987068
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
193 KB
Volume
114
Category
Article
ISSN
0022-3093

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