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A new technique to fabricate ultra-shallow-junctions, combining in situ vapour HCl etching and in situ doped epitaxial SiGe re-growth

✍ Scribed by Roger Loo; Matty Caymax; Philippe Meunier-Beillard; Ivan Peytier; Frank Holsteyns; Stefan Kubicek; Peter Verheyen; Richard Lindsay; Olivier Richard


Book ID
103815709
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
187 KB
Volume
224
Category
Article
ISSN
0169-4332

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