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A new soft-error-immune static memory cell having a vertical driver MOSFET with a buried source for the ground potential
✍ Scribed by Minami, M.; Wakui, Y.; Matsuki, H.; Nagano, T.
- Book ID
- 111961599
- Publisher
- IEEE
- Year
- 1989
- Tongue
- English
- Weight
- 645 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0018-9383
- DOI
- 10.1109/16.34228
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