A New Silicon-Doped Cation-Deficient Thiospinel, Cu5.52(8)Si1.04(8) □1.44Fe4Sn12S32: Crystal Structure, Mössbauer Studies, and Electrical Properties
✍ Scribed by G Garg; S Bobev; A Roy; J Ghose; D Das; A.K Ganguli
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 300 KB
- Volume
- 161
- Category
- Article
- ISSN
- 0022-4596
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✦ Synopsis
Starting from pure metals and sulfur in evacuated silica tubes, single crystals of Cu 5.52(8) Si 1.04( 8) ) 1.44 Fe 4 Sn 12 S 32 have been obtained by quenching from 6803C. The above cation-de5cient thiospinel crystallizes in the Fd3 m space group with a ؍ 10.3322(6) A s . Si doping leads to additional vacancies in the copper site. 119 Sn MoK ssbauer data show the presence of Sn in II as well as IV oxidation states and all the Sn is present in the octahedral 16d sites. 57 Fe MoK ssbauer studies show Fe to be present in the octahedral sites in both II and III oxidation states. The above thiospinel shows semiconducting behavior with resistivity of &1 ؋ 10 2 -cm at room temperature and a small band gap of &0.1 eV.