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A new reaction mode of germanium-silicon bond formation: insertion reactions of H2GeLiF with SiH3X (X = F, Cl, Br)

✍ Scribed by Yan, Bingfei; Li, Wenzuo; Xiao, Cuiping; Li, Qingzhong; Cheng, Jianbo

Book ID
125350976
Publisher
Springer-Verlag
Year
2013
Tongue
English
Weight
215 KB
Volume
19
Category
Article
ISSN
1610-2940

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A method for constructing empirical potential surfaces is proposed which is based on the BSBL (bond-strength-bond-length) treatment originally developed to predict kinetic parameters for atom transfer reactions. Quasiclassical trajectory results for X + H+HX + H (X = F, Cl, Br, I) and the reverse re