## Abstract A new planar‐type dielectric resonator (PDR) with a high __Q__ has been developed. The PDR is fabricated by eching the GaAs substrate with an air gap around resonator and one side ground plane to reduce metal loss and facilitate integration. The realized PDR showed a good performance at
A new planar-type dielectric resonator using LTCC technology for mm-wave band applications
✍ Scribed by Sanghee Kim; Jounghyun Yim; Bumman Kim
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 425 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A new planar‐type dielectric resonator (PDR) with a high unloaded Q has been developed using LTCC Technology. The PDR consists of two different dielectric constant materials, high dielectric LTCC cavity (ϵ~r~ = 36) acting as a resonator and low dielectric LTCC layer (ϵ~r~ = 5.2) surrounding the cavity. Also, the layer has staggered air holes on the top and bottom of the resonator instead of the air cavity of the original PDR, a hollow patch center ground plane at the middle, and shielded cavity metals. The newly realized PDR structure shows a high unloaded Q of about 6212 at 37.3 GHz and the measured results are in good agreement with the simulated ones. The PDR can be easily integrated into a planar circuit and can be applicable to mm‐wave band systems. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 44: 533–536, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20688
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