β Scribed by M. Miclau; N. Miclau; M. Poienar; I. Grozescu
No coin nor oath required. For personal study only.
The interest of Si 1-x Ge x O 2 single crystals with alpha-quartz structure is connected to improvement of electromechanical coefficients and rise of Ξ± -Ξ² phase transition of quartz one. Growth of an Ξ± -Si x Ge 1-x O 2 crystal was realized by a hydrothermal method of temperature gradient in autoclaves, made from Cr-Ni alloys. Nutrient material was prepared from synthetic quartz as crashed rods and placed in the bottom of autoclaves. There was loaded GeO 2 powder additive in proportions to quartz nutrient. Single crystals were investigated by electron microprobe analysis, X-ray diffraction and atomic force microscopy. The most important result, which was obtained during the investigations, is an experimental proof of growth of Ξ±-Si x Ge 1-x O 2 single crystals under the hydrothermal conditions. The present results thus open the possibility to tune the piezoelectric properties of these materials by varying the chemical composition.
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