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A new organoindium precursor for electronic materials

✍ Scribed by V. Soulière; P. Abraham; M. Sacilotti; M.P. Berthet; J. Bouix; Y. Monteil; A.M. Pougnet; R. Mellet; A. Ougazzaden; A. Mircéa

Book ID
103954159
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
463 KB
Volume
17
Category
Article
ISSN
0921-5107

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✦ Synopsis

Among all the possible alternative precursors for growth of indium-containing material, the tfimethylindium-trimethylamine adduct appears to be the most suitable. It is a simple addition compound between trimethylindium and trimethylamine, non-pyrophoric and relatively stable towards air and moisture. Its vapour pressure approaches that of trimethylindium. It was synthesized from indium metal, magnesium and methyl iodide as starting materials and then displacement of the solvated-trimethylindium intermediate formed, by the gaseous trimethylamine. Indium phosphide layers were grown with phosphine and the trimethylindium-trimethylamine adduct purified by zone refining.

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