✦ LIBER ✦
A New Operating Scheme by Switching the Polarity of Program/Erase Bias for Partially Oxidized Amorphous-Si-Based Charge-Trap Memory
✍ Scribed by Sangjin Park; Young-Kwan Cha; Cha, D.; Shin, S.; Jae Woong Hyun; Jung Hoon Lee; Youngsoo Park; In-Kyeong Yoo; Suk-Ho Choi
- Book ID
- 114618485
- Publisher
- IEEE
- Year
- 2006
- Tongue
- English
- Weight
- 485 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0018-9383
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