A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps

✍ Scribed by V.M. Aroutiounian; G.A. Avetisyan; V.V. Buniatyan; P.G. Soukiassian; Vaz.V. Buniatyan

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 198 KB
• Volume: 252
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2005.12.050