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A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors

✍ Scribed by Gang Zhang; Cressler, J.D.; Guofu Niu; Joseph, A.J.


Book ID
114616912
Publisher
IEEE
Year
2002
Tongue
English
Weight
503 KB
Volume
49
Category
Article
ISSN
0018-9383

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