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A new method utilizing Ti—silicide oxidation for the fabrication of a MOSFET with a self-aligned Schottky source/drain

✍ Scribed by Yachi, T.; Suyama, S.


Book ID
119938990
Publisher
IEEE
Year
1983
Tongue
English
Weight
329 KB
Volume
4
Category
Article
ISSN
0741-3106

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