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A new method to determine Si/SiO2 interface recombination parameters using a gate-controlled point-junction diode under illumination

✍ Scribed by R. Girisch; R.P. Mertens; R.F. de Keersmaecker


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
355 KB
Volume
30
Category
Article
ISSN
0169-4332

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