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A new method for the determination of channel depth and doping profile in buried-channel MOS transistors : K. Iniewski and A. Jakubowski. Solid-St. Electron. 31, 1259 (1988)


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
254 KB
Volume
29
Category
Article
ISSN
0026-2714

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