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A new memory element based on silicon nanoclusters in a ZrO2insulator with a high permittivity for electrically erasable read-only memory

✍ Scribed by V. A. Gritsenko; K. A. Nasyrov; D. V. Gritsenko; Yu. N. Novikov; A. L. Aseev; J. H. Lee; J. -W. Lee; C. W. Kim


Book ID
110143154
Publisher
Springer
Year
2005
Tongue
English
Weight
76 KB
Volume
39
Category
Article
ISSN
1063-7826

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