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A new LPE growth method of semiconductor heterostructures with thickness profile variation of epitaxial layers

✍ Scribed by V. A. Mishurnyi; F. De Anda; A. Yu. Gorbatchev; I. C. Hernández; Del Castillo; J. Nieto-Navarro


Book ID
107457735
Publisher
Springer US
Year
1998
Tongue
English
Weight
126 KB
Volume
27
Category
Article
ISSN
0361-5235

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