✦ LIBER ✦

A new differential stacked spiral inductor with improved self-resonance frequency

✍ Scribed by Joonchul Kim; Byungjae Nam; Hyeongdong Kim

Book ID: 102517619
Publisher: John Wiley and Sons
Year: 2011
Tongue: English
Weight: 343 KB
Volume: 53
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.25900

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✦ Synopsis

Abstract

A new silicon‐based differential stacked spiral inductor (DSSI) was implemented using a standard 0.18‐μm complimentary metal‐oxide semiconductor technology. Based on the measured two‐port S‐parameter using a standard de‐embedding procedure, the self‐resonance frequency, f~sr~, and quality factor, Q, of the new DSSI were compared with a conventional DSSI. The f~sr~ of the new DSSI was nearly twice as high as that of the conventional DSSI, and the Q value of the new DSSI was also enhanced. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:1024–1026, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25900

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