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A new computer-aided simulation model for polycrystalline silicon film resistors

โœ Scribed by Ching-Yuan Wu; Weng-Dah Ken

Book ID
107856629
Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
757 KB
Volume
26
Category
Article
ISSN
0038-1101

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Short channel effects are incorporated to investigate the impact of the channel length on the turn-on characteristics of a polycrystalline silicon thin-film transistor (poly-Si TFT). The developed threshold voltage and field effect mobility are the key parameters in analysing the above-threshold cha