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A New Case of Crystallographic Stacking Fault: U3O8−x

✍ Scribed by SATO, RYOITIRO


Book ID
109611546
Publisher
Nature Publishing Group
Year
1960
Tongue
English
Weight
311 KB
Volume
188
Category
Article
ISSN
0028-0836

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Determination of stacking fault densitie
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## Abstract Thick 3C‐SiC single crystals grown by continuous‐feed physical vapor transport (CF‐PVT) are studied by high‐resolution X‐ray reciprocal space mapping. These crystals contain Shockley‐type stacking faults (SFs) lying in the {111} planes, which give rise to diffuse intensity streaks along