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A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET

✍ Scribed by Fuchs, E.; Dollfus, P.; Le Carval, G.; Barraud, S.; Villanueva, D.; Salvetti, F.; Jaouen, H.; Skotnicki, T.

Book ID: 114617964
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 862 KB
Volume: 52
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2005.856181

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