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A new approach to verify and derive a transverse-field-dependent mobility model for electrons in MOS inversion layers

✍ Scribed by Shin, H.; Tasch, A.F., Jr.; Maziar, C.M.; Banerjee, S.K.


Book ID
114535379
Publisher
IEEE
Year
1989
Tongue
English
Weight
779 KB
Volume
36
Category
Article
ISSN
0018-9383

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