✦ LIBER ✦
A new approach to simulating n-MOSFET gate current degradation by including hot-electron induced oxide damage
✍ Scribed by Cherng-Ming Yih; Shui-Ming Cheng; Chung, S.S.
- Book ID
- 114537479
- Publisher
- IEEE
- Year
- 1998
- Tongue
- English
- Weight
- 192 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0018-9383
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