A new approach to model nonquasi-static (NQS) effects for MOSFETs. Part II: Small-signal analysis

✍ Scribed by Roy, A.S.; Vasi, J.M.; Patil, M.B.

• Book ID: 114617248
• Publisher: IEEE
• Year: 2003
• Tongue: English
• Weight: 592 KB
• Volume: 50
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2003.819054