✦ LIBER ✦

A new and improved physics-based model for MOS transistors

✍ Scribed by Hauser, J.R.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A physically-based MOS transistor avalan

✍ Hei Wong 📂 Article 📅 1995 🏛 IEEE 🌐 English ⚖ 580 KB

A new time‐dependent mobility degradatio

✍ Özcelep, Yasin; Kuntman, Ayten 📂 Article 📅 2012 🏛 Emerald Group Publishing Limited 🌐 English ⚖ 129 KB

MODELLA-a new physics-based compact mode

✍ O'Hara, F.G.; van den Biesen, J.J.H.; de Graaff, H.C.; Kloosterman, W.J.; Foley, 📂 Article 📅 1992 🏛 IEEE 🌐 English ⚖ 919 KB

A Simple Charge-Based Model for MOS Tran

✍ Serhan, G.I.; Swei-Yam Yu 📂 Article 📅 1983 🏛 IEEE 🌐 English ⚖ 537 KB

A charge-based model for short-channel M

✍ Gharabagi, R.; El-Nokali, M.A. 📂 Article 📅 1990 🏛 IEEE 🌐 English ⚖ 753 KB

TRANSISTOR LEVEL MODELING FOR ANALOG/RF

✍ GRABINSKI, WLADYSLAW; NAUWELAERS, BART; SCHREURS, DOMINIQUE 📂 Article 📅 2006 🏛 Springer Netherlands ⚖ 777 KB