✦ LIBER ✦
A new analytical model for the GaAs MESFET in the saturation region : P POUVIL, J -L GAUTIER, D PASQUET (ENSEA, Cergy, France) IEEE Trans. Electron Devices (USA), vol. 35, no. 8, pp. 1215–1222 (Aug. 1988)
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 98 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0026-2692
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