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A new alternative to secondary CsM+ions for depth profiling of multilayer metal structures by secondary ion mass spectrometry

✍ Scribed by M. N. Drozdov, Yu. N. Drozdov, V. N. Polkovnikov…

Book ID
120811487
Publisher
SP MAIK Nauka/Interperiodica
Year
2013
Tongue
English
Weight
219 KB
Volume
39
Category
Article
ISSN
1063-7850

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✍ F. A. Stevie; J. L. Moore 📂 Article 📅 1992 🏛 John Wiley and Sons 🌐 English ⚖ 483 KB

## Abstract Aluminum films sputter‐deposited on silicon have been analyzed using secondary ion mass spectrometry with sample rotation during O~2~^+^ ion bombardment. Sample rotation prevented bombardment‐induced topography formation and associated loss of depth resolution. Analysis of silicon and b