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A new 4H-SiC normally off lateral channel vertical JFET with extremely low power losses: source inserted double-gate structure with a supplementary highly doped region

✍ Scribed by Young Chul Choi; Ho-Young Cha; Eastman, L.F.; Spencer, M.G.


Book ID
114617942
Publisher
IEEE
Year
2005
Tongue
English
Weight
530 KB
Volume
52
Category
Article
ISSN
0018-9383

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