A nanoscale approach to the electrical properties of MOS memory devices with Si-nanocrystals

✍ Scribed by M. Porti; M. Avidano; M. Nafrı́a; X. Aymerich; J. Carreras; B. Garrido

• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 244 KB
• Volume: 80
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2005.04.079