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A MOSFET tetrode with 0.4 μm gates fabricated by mixed exposure of X-ray and DUV lithography

✍ Scribed by J. Hersener; E. Piper; A. Wilhelm; G. Birkenstock


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
596 KB
Volume
9
Category
Article
ISSN
0167-9317

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