A model for the simulation of a two MOS-transistor inverter

✍ Scribed by R.S. Ferguson; D. Sprevak

• Publisher: Elsevier Science
• Year: 1983
• Tongue: English
• Weight: 601 KB
• Volume: 25
• Category: Article
• ISSN: 0378-4754
• DOI: 10.1016/0378-4754(83)90101-5

✦ Synopsis

Using

a physical model to represent the response of a MOS transistor, observations of the output voltage of a two-transitor inverter circuit are generated.

The simulated observations are used to assetable a data base from which a statistical model for the inverter is constructed.

This statistical model generates the distribution of the output of the inverter with greater efficiency than the physical model and thus it enables the simulation of complex multi-inverter circuits.