It Ius recently been established that physiul realism of the resu!ts can be irnprov-d within the framework of the self-consistent statist&l exctiange multiple scattering wave method if the atomic spheres are allowed to overkp. Here we report that by semi-empirically adjust% the overlap of the atomic
A model for self-consistent cluster calculations of the electronic structure of doped semiconductors by means of the SCF Xα scattered wave method
✍ Scribed by B. Cartling; B. Roos; U. Wahlgren
- Publisher
- Elsevier Science
- Year
- 1973
- Tongue
- English
- Weight
- 451 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0009-2614
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✦ Synopsis
It is shown that essential Features of the band structure of a. covalent crystal, as silicon, emerge in the level scheme of a cluster calculation utilizing the SCF Xa scattered wave method. 'The model cluster was terminated by a layer of saturating atoms to take care or the dangling bonds and the potential was spherically averaged around tetrahedral interstitia1 positions. It is also shown that such a model is appropriate fo? the description of a substituted impurity. Promising agreement with experimental observations turns out to be obttined aheady with such a small cluster as of five atoms. Results are reported for pure silicon and silicon with sulphur and iron impurities.
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