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A model for self-consistent cluster calculations of the electronic structure of doped semiconductors by means of the SCF Xα scattered wave method

✍ Scribed by B. Cartling; B. Roos; U. Wahlgren


Publisher
Elsevier Science
Year
1973
Tongue
English
Weight
451 KB
Volume
21
Category
Article
ISSN
0009-2614

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✦ Synopsis


It is shown that essential Features of the band structure of a. covalent crystal, as silicon, emerge in the level scheme of a cluster calculation utilizing the SCF Xa scattered wave method. 'The model cluster was terminated by a layer of saturating atoms to take care or the dangling bonds and the potential was spherically averaged around tetrahedral interstitia1 positions. It is also shown that such a model is appropriate fo? the description of a substituted impurity. Promising agreement with experimental observations turns out to be obttined aheady with such a small cluster as of five atoms. Results are reported for pure silicon and silicon with sulphur and iron impurities.


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Calculation of the electronic structure
✍ I.P. Batra; O. Robaux 📂 Article 📅 1974 🏛 Elsevier Science 🌐 English ⚖ 308 KB

It Ius recently been established that physiul realism of the resu!ts can be irnprov-d within the framework of the self-consistent statist&l exctiange multiple scattering wave method if the atomic spheres are allowed to overkp. Here we report that by semi-empirically adjust% the overlap of the atomic