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A model for hot-electron-induced MOSFET linear-current degradation based on mobility reduction due to interface-state generation

✍ Scribed by Chung, J.E.; Ko, P.-K.; Hu, C.


Book ID
114537959
Publisher
IEEE
Year
1991
Tongue
English
Weight
826 KB
Volume
38
Category
Article
ISSN
0018-9383

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