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A method of measuring thicknesses and doping profiles of homoepitaxial thin (from 0.1 μm on) films of silicon and gallium arsenide: M. Jagusztyn. Electron Technology. Warsaw7, (34), 81 (1974)


Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
252 KB
Volume
15
Category
Article
ISSN
0026-2714

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