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A method for the preparation of very thin foils

✍ Scribed by E. Kashy; R.R. Perry; J.R. Risser


Publisher
Elsevier Science
Year
1959
Weight
350 KB
Volume
4
Category
Article
ISSN
0029-554X

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A new method of thin section preparation of 111-V semiconductors and multilayers for transmission electron microscopy (TEM) is presented that exhibits considerable advantages over conventional methods such as ion beam milling and jet thinning. GaAs thin films and multilayers of GaAs/In,Gal\_,As/GaAs